Electrochemically FeS2 thin films have been synthesized on ITO substrates at room temperature (25 degrees C). UV-Vis, X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) were used for the characterization of nanostructure FeS2 thin films. Two probe I-V measurements convey that the material is p type and a p-n junction (diode) was found to be developed between FeS2 and ITO layer. Cyclic voltametry study shows that FeS2/ITO electrode facilitates the reduction of hydrogen peroxide and exhibits excellent electro-catalytic activity towards its sensing. Photocatalytic study reveals that the synthesized thin films are also efficient to degrade terephthalic acid (TA). (C) 2015 Elsevier B.V. All rights reserved.
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Korea Univ Sci & Technol, Dept Nanomechatron, Taejon 305350, South KoreaUniv Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
Choi, Hyekyoung
Jeong, Sohee
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Korea Univ Sci & Technol, Dept Nanomechatron, Taejon 305350, South Korea
Korea Inst Machinery & Mat, Nanomech Res Div, Taejon 305343, South KoreaUniv Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
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Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Bi, Yu
Yuan, Yongbo
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Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Yuan, Yongbo
Exstrom, Christopher L.
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Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USA
Univ Nebraska, Dept Chem, Kearney, NE 68849 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Exstrom, Christopher L.
Darveau, Scott A.
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Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USA
Univ Nebraska, Dept Chem, Kearney, NE 68849 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Darveau, Scott A.
Huang, Jinsong
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Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
机构:
Korea Univ Sci & Technol, Dept Nanomechatron, Taejon 305350, South KoreaUniv Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
Choi, Hyekyoung
Jeong, Sohee
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机构:
Korea Univ Sci & Technol, Dept Nanomechatron, Taejon 305350, South Korea
Korea Inst Machinery & Mat, Nanomech Res Div, Taejon 305343, South KoreaUniv Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
机构:
Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Bi, Yu
Yuan, Yongbo
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机构:
Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Yuan, Yongbo
Exstrom, Christopher L.
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h-index: 0
机构:
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USA
Univ Nebraska, Dept Chem, Kearney, NE 68849 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Exstrom, Christopher L.
Darveau, Scott A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USA
Univ Nebraska, Dept Chem, Kearney, NE 68849 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Darveau, Scott A.
Huang, Jinsong
论文数: 0引用数: 0
h-index: 0
机构:
Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68583 USAUniv Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA