Sub-picosecond exciton spin-relaxation in GaN

被引：0

作者：

Tackeuchi, Atsushi ^{[1
]}

Kuroda, Takamasa ^{[1
]}

Otake, Hirotaka ^{[1
]}

Taniguchi, Kazuyoshi ^{[2
]}

Chinone, Takako ^{[2
]}

Liang, Ji-Hao ^{[2
]}

Masataka, Kajikawa ^{[2
]}

Naochika, Horio ^{[2
]}

机构：

[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan

[2] Stanley Elect Co Ltd, Aoba Ku, Yokohama, Kanagawa 2250014, Japan

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS X | 2006年 / 6118卷

关键词：

D O I：

10.1117/12.640263

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T-1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

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页数：8

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