ANNEALING CHARACTERISTIC VARIATION OF 4H-SiC DIODE BY ION IMPLANTATION

被引：0
|
作者：
Nakamura, T. [1 ]
Watabe, Y. [1 ]
Tajima, T. [1 ]
Satoh, M. [1 ]
Nakamura, T. [1 ]
机构：
[1] Hosei Univ, Res Ctr Micronano Technor, 3-11-15 Midori Cho, Koganei, Toky 1840003, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28 | 2010年 / 28卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we researched characteristics of Al ion implanted 4H-SiC by using 3 different conditions of annealing process. After that, the electrical characteristic variation of Al. ion 'implanted 4H-SiC diode has been investigated by the best condition of Annealing process.
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页码：85 / 88
页数：4
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