Indium-gallium-zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

被引：4

作者：

Lin, Huang-Kai ^{[1
]}

Su, Liang-Yu ^{[1
]}

Hung, Chia-Chin ^{[1
]}

Huang, JianJang ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

THIN SOLID FILMS | 2013年 / 540卷

关键词：

Amorphous indium-gallium-zinc oxide; Subthreshold swing; Thin film transistors; GLASS;

D O I：

10.1016/j.tsf.2013.06.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：247 / 250

页数：4