CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature

被引：40

作者：

de Moure-Flores, F. ^{[1
]}

Quinones-Galvan, J. G. ^{[2
]}

Guillen-Cervantes, A. ^{[2
]}

Arias-Ceron, J. S. ^{[2
]}

Hernandez-Hernandez, A. ^{[2
]}

Santoyo-Salazar, J. ^{[2
]}

Santos-Cruz, J. ^{[1
]}

Mayen-Hernandez, S. A. ^{[1
]}

Olvera, M. de la L. ^{[3
]}

Mendoza-Alvarez, J. G. ^{[2
]}

Melendez-Lira, M. ^{[2
]}

Contreras-Puente, G. ^{[4
]}

机构：

[1] Univ Autonoma Queretaro, Fac Quim, Queretaro 76010, Mexico

[2] CINVESTAV IPN, Dept Fis, Mexico City 07360, DF, Mexico

[3] CINVESTAV IPN, Dept Ingn Electr, Secc Estado Solido, Mexico City 07360, DF, Mexico

[4] IPN, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 386卷

关键词：

Pulsed laser deposition; Semiconducting II-VI materials; Solar cells;

D O I：

10.1016/j.jcrysgro.2013.09.036

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CdTe thin films were deposited by pulsed laser deposition on Corning glass slides using CdTe powder as target. Films were grown at substrate temperatures ranging from room temperature (similar to 25 degrees C) to 300 degrees C. The structural, compositional and optical properties were analyzed as a function of substrate temperature. X-ray diffraction shows that CdTe films grown at room temperature have hexagonal phase, while for higher temperatures the films have cubic phase. Raman and EDS indicate that films grew with Te excess, which suggests that CdTe films have p-type conductivity. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：27 / 31

页数：5

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