Transport properties of thin SnO2aOE©Sb⟩ films grown by pulsed laser deposition

被引：3
|
作者：
Petukhov, I. A. [1 ]
Parshina, L. S. [2 ]
Zuev, D. A. [2 ]
Lotin, A. A. [2 ]
Novodvorsky, O. A. [2 ]
Khramova, O. D. [2 ]
Shatokhin, A. N. [1 ]
Putilin, F. N. [1 ]
Rumyantseva, M. N. [1 ]
Kozlovskii, V. F. [1 ]
Maslakov, K. I. [1 ]
Ivanov, V. K. [3 ]
Gaskov, A. M. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia
[3] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
来源：
INORGANIC MATERIALS | 2013年 / 49卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
ITO; CONDUCTIVITY; SB;
D O I：
10.1134/S0020168513100099
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin SnO2 < Sb > films grown by pulsed laser deposition have been characterized by X-ray diffraction, optical spectroscopy, and scanning electron microscopy. The carrier mobility and concentration in the films have been determined as functions of target composition (0-8 at % Sb) using Hall effect measurements, and the resistivity of the films has been measured by a four-probe technique. The lowest resistivity (rho = 2 x 10(-3) Omega cm) and the highest transmission (a parts per thousand integral 85%) of the films in the spectral range 400-800 nm have been obtained at a target composition Sb/(Sn + Sb) = 2 at %. The observed variation in the resistivity of the films is determined by changes in carrier concentration to a greater extent than by changes in carrier mobility. X-ray photoelectron spectroscopy results demonstrate that the predominant charge state of the antimony in the films is Sb5+.
引用
收藏
页码：1123 / 1126
页数：4
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