Transport properties of thin SnO2aOE©Sb⟩ films grown by pulsed laser deposition

被引：3

作者：

Petukhov, I. A. ^{[1
]}

Parshina, L. S. ^{[2
]}

Zuev, D. A. ^{[2
]}

Lotin, A. A. ^{[2
]}

Novodvorsky, O. A. ^{[2
]}

Khramova, O. D. ^{[2
]}

Shatokhin, A. N. ^{[1
]}

Putilin, F. N. ^{[1
]}

Rumyantseva, M. N. ^{[1
]}

Kozlovskii, V. F. ^{[1
]}

Maslakov, K. I. ^{[1
]}

Ivanov, V. K. ^{[3
]}

Gaskov, A. M. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia

[3] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

来源：

INORGANIC MATERIALS | 2013年 / 49卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

ITO; CONDUCTIVITY; SB;

D O I：

10.1134/S0020168513100099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin SnO2 < Sb > films grown by pulsed laser deposition have been characterized by X-ray diffraction, optical spectroscopy, and scanning electron microscopy. The carrier mobility and concentration in the films have been determined as functions of target composition (0-8 at % Sb) using Hall effect measurements, and the resistivity of the films has been measured by a four-probe technique. The lowest resistivity (rho = 2 x 10(-3) Omega cm) and the highest transmission (a parts per thousand integral 85%) of the films in the spectral range 400-800 nm have been obtained at a target composition Sb/(Sn + Sb) = 2 at %. The observed variation in the resistivity of the films is determined by changes in carrier concentration to a greater extent than by changes in carrier mobility. X-ray photoelectron spectroscopy results demonstrate that the predominant charge state of the antimony in the films is Sb5+.

引用

页码：1123 / 1126

页数：4

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