High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 x 3) silicide structure on Cu(001)

被引：1

作者：

Lalmi, B. ^{[1
]}

Chorro, M. ^{[2
]}

Belkhou, R. ^{[1
]}

机构：

[1] Synchrotron SOLEIL, HERMES Beamline, F-91192 St Aubin, France

[2] Synchrotron SOLEIL, LUCIA Beamline, F-91192 St Aubin, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 06期

关键词：

SURFACE ALLOY; ATOMIC-STRUCTURE; CU(111); ADSORPTION; GROWTH; SI; DECOMPOSITION; PHOTOEMISSION; SPECTROSCOPY; KINETICS;

D O I：

10.1063/1.4817761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (similar to 0.5 ML) and after annealing at 100 degrees C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate (5 x 3) superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the (5 x 3) structure. (C) 2013 AIP Publishing LLC.

引用

页数：5

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