2D Simulation of Planar InP/InGaAs Avalanche Photodiode with No Guard Rings

被引：2

作者：

Malyshev, S. A. ^{[1
]}

Chizh, A. L. ^{[1
]}

Vasileuski, Y. G. ^{[1
]}

机构：

[1] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220090, BELARUS

来源：

NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES | 2008年

关键词：

D O I：

10.1109/NUSOD.2008.4668252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially separate multiplication laver and p(+)-region. 2D simulation of the device are performed in cylindrical coordinates. Features of the avalanche photodiode are discussed.

引用

页码：81 / 82

页数：2

共 6 条

[1] Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications [J].

Burm, J ;

Choi, JY ;

Cho, SR ;

Kim, MD ;

Yang, SK ;

Back, JM ;

Rhee, DY ;

Jeon, BO ;

Kang, HY ;

Jang, DH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1721-1723

[2] Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes [J].

Haralson, JN ;

Parks, JW ;

Brennan, KF ;

Clark, W ;

Tarof, LE .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (11) :2137-2140

[3] Novel edge suppression technique for planar avalanche photodiodes [J].

Haralson, JN ;

Brennan, KF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) :1863-1869

[4] A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION [J].

LIU, Y ;

FORREST, SR ;

HLADKY, J ;

LANGE, MJ ;

ACKLEY, DE .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (02) :182-193

[5]

MALYSHEV S, 2005, P 5 INT C NUM SIM OP, P45

[6]

MALYSHEV S, 2007, P 2007 INT C EUROCON, P2047

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