Preparation of CuInS2 thin films from materials grown by mechanochemical method

CuInS2 thin films prepared from CuInS2 polycrystal grown by mechanochemical method using vacuum evaporation. The evaporated films were annealed in H2S atmosphere from 250 to 500 degrees C for 1 hour. Properties of the films were investigated using X-ray diffraction, UV-Visible-NIR spectrophotometer, electron probe micro analysis and scanning electron microscopy. CuInS2 single phase is obtained if annealing temperature were over 400 degrees C. The chemical composition of thin films is stoichiometry if annealing temperature was over 350 degrees C. All of Bandgap energys of thin film annealed in H2S atmosphre over 350 degrees C are from 1.43 to 1.48 eV. The surfaces of thin films annealed aren't smoothly. These results indicate that we can obtain thin film which has CuInS2 single phase and stoichiometry if annealing temperature were over 400 degrees C. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim