Active-matrix OLED on bendable metal foil

被引：49
作者：
Cheon, JH [1 ]
Choi, JH
Hur, JH
Jang, J
Shin, HS
Jeong, JK
Mo, YG
Chung, HK
机构：
[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期
关键词：
active-matrix organic light-emitting diode (AMOLED); metal foil; metal-induced crystallization with a nitride cap layer (MICC); poly-Si thin-film transistor (TFr); stainless steel;
D O I：
10.1109/TED.2006.871873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This brief report; a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm(2)/Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10(-12) A/mu m at V-ds = -0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The to emission, organic light emitting display having a brightness of 100 cd/m(2).
引用
收藏
页码：1273 / 1276
页数：4
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