Penetration of Copper-Manganese Self-Forming Barrier into SiO2 Pore-Sealed SiCOH during Deposition

被引：7

作者：

Borja, Juan ^{[1
]}

Plawsky, Joel. L. ^{[1
]}

Gill, William N. ^{[1
]}

Bakhru, Hassaram ^{[2
]}

He, Ming ^{[1
]}

Lu, Toh-Ming ^{[3
]}

机构：

[1] Rensselaer Polytech Inst, Howard P Isermann Dept Chem & Biol Engn, Troy, NY 12180 USA

[2] SUNY Albany, CNSE, Albany, NY 12203 USA

[3] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 09期

关键词：

THERMAL-STABILITY;

D O I：

10.1149/2.021309jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of a self-forming Cu diffusion barrier on pore-sealed SiCOH was investigated. SiCOH films 20% porous and 230 nm thick were capped with 36 nm SiO2. Fabricated structures (Cu-Mn/SiO2/SiCOH) were subjected to a back-side Secondary Ion Mass Spectrometry (SIMS) depth profile study to assess the extent of metal migration. SIMS depth profiles revealed that Cu and Mn diffused in significant amounts across the SiO2 layer during fabrication steps. A mass transport model was used to describe the migration of metal species. The diffusion coefficient for Cu in the SiO2 pore-sealing layer is approximately D similar to 5.62 x 10(-16) cm(2)/sec. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：N175 / N178

页数：4

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