Vapour growth of II-VI single crystals doped by transition metals for mid-infrared lasers

被引：53
作者：
Akimov, VA
Frolov, MP
Korostelin, YV [1 ]
Kozlovsky, VI
Landman, AI
Podmar'kov, YP
Voronov, AA
机构：
[1] RAS, PN Lebedev Phys Inst, 53 Leninsky Pr, Moscow 119991, Russia
[2] Moscow Inst Phys & Technol, Moscow R-141700, Russia
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期
关键词：
D O I：
10.1002/pssc.200564723
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A modified vapour phase contact-free method to grow homogeneous single crystals of II-VI compounds doped by transition metals is presented. Single crystals of ZnSe:Cr, ZnSe:Fe, ZnSe:Co, ZnSe:Ni, CdSe:Cr, ZnTe:Cr, ZnS:Fe and ZnS:Mn with doping level up to 10(19) cm(-3) have been grown. Efficient lasing at about 2.5 and 4 mu m with ZnSe:Cr and ZnSe:Fe crystals respectively has been achieved. Dependence of Fe2+ :ZnSe laser characteristics on temperature is presented in more detail. A possibility of using Cr2+:ZnSe laser in intracavity laser spectroscopy is demonstrated. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：1213 / +
页数：2
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