A study of ZnMnO as a material for magneto- and spin-electronics

被引:5
作者
Mofor, AC [1 ]
Reuss, F
El-Shaer, A
Ahlers, H
Siegner, U
Bakin, A
Limmer, W
Eisenmenger, J
Mueller, T
Ziemann, P
Wang, A
机构
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, Hans-Sommer-Str 66, D-38106 Braunschweig, Germany
[2] Univ Ulm, Dept Semicond Phys, D-89081 Ulm, Germany
[3] Univ Ulm, Dept Solid State Phys, D-89081 Ulm, Germany
[4] PTB, D-38116 Braunschweig, Germany
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期
关键词
D O I
10.1002/pssc.200564648
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Due to the large spin moment exhibited by the transition metal Mn, it is being extensively investigated as a candidate element for producing ferromagnetic ZnO for magnetoelectronic and spintronic applications. However, ferromagnetism in ZnMnO is being controversially discussed. We review our investigations on epitaxially grown ZnMnO layers and present findings on Mn-implanted ZnO layers. The results of our investigations on the magnetic properties of the fabricated ZnMnO show that it is not trivial to confirm ferromagnetism in ZnMnO grown on sapphire because of ferromagnetic signal produced by the substrate. After a deduction of the substrate contribution to magnetisation data, both epitaxially doped ZnO layers and Mn-implanted bulk and epitaxial layers show paramagnetic behaviour. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1104 / +
页数:2
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