Shape and curved surface effect on silicon quantum dots

被引：1

作者：

Huang Wei-Qi ^{[1
]}

Zhou Nian-Jie ^{[1
]}

Yin Jun ^{[1
]}

Miao Xin-Jian ^{[1
]}

Huang Zhong-Mei ^{[1
]}

Chen Han-Qiong ^{[1
]}

Su Qin ^{[1
]}

Liu Shi-Rong ^{[2
]}

Qin Chao-Jian ^{[2
]}

机构：

[1] Guizhou Univ, Inst Nanophoton Phys, Key Lab Photoelect Technol & Applicat, Guiyang 550025, Peoples R China

[2] Chinese Acad Sci, Inst Geochem, State Key Lab Ore Deposit Geochem, Guiyang 550003, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Si quantum dots; curved surface effect; surface bonds; localized levels; POROUS SILICON;

D O I：

10.7498/aps.62.084205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in band gap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, an Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectrum on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels formed in the band gap.

引用

页数：6