On the UV responsivity of neutron irradiated 4H-SiC

被引：6
|
作者：
Cavallini, Anna [1 ,4 ]
Castaldini, Antonio [1 ,4 ]
Nava, Filippo [2 ,3 ]
机构：
[1] CNISM Italy, I-40127 Bologna, Italy
[2] Univ Modena, Dept Phys, I-41100 Modena, Italy
[3] Ist Nazl Fis Nucl, Rome, Italy
[4] Univ Bologna, Dept Phys, I-40126 Bologna, Italy
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期
关键词：
D O I：
10.1063/1.2993224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on UV responsivity of 4H-SiC photodiodes irradiated by 1 MeV neutrons. Current-voltage characteristics, photoresponse spectra, and responsivity were obtained with light wavelength from 200 to 450 nm. Photoresponse results slightly affected by irradiation up to the threshold fluence Phi(critical)=8x10(14) cm(-2). At fluences >=Phi(critical) the rejection rate is in the order of 10(3) in the range of 200-320 nm while it is less than 10(2) at about 320 nm. The abrupt increase in midgap traps induced by irradiation at Phi(critical), observed by photoinduced current transient spectroscopy, proves carrier generation/trapping to be the controlling mechanism for the responsivity. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2993224]
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页数：3
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