Quantitative IR Readout of Fulgimide Monolayer Switching on Si(111) Surfaces

被引：9
作者：
de Villeneuve, Catherine Henry [2 ]
Michalik, Fabian [1 ,2 ]
Chazalviel, Jean Noel [2 ]
Rueck-Braun, Karola [1 ]
Allongue, P. [2 ]
机构：
[1] Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
[2] Ecole Polytech, CNRS, F-91128 Palaiseau, France
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 03期
关键词：
fulgimide compounds; photochromism; organic monolayers; silicon;
D O I：
10.1002/adma.201201546
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Creating photoactive monolayers of photochromes is of considerable technological interest. This paper describes the construct of fulgimide monolayers on silicon surfaces and presents a quantitative IR analysis studies of their composition and switching properties. The scheme on top shows the structure of the starting C-form terminated Si(111) surface and the graph below sketches the surface composition at the photostationnary states under visisble and UV irradiation, as derived from in situ IR spectroscopy after several UV/vis irradiation cycles. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：416 / 421
页数：6
相关论文
共 50 条
  • [41] ASYMMETRY IN INDENTATION-INDUCED MECHANICAL DAMAGE ON SI (111) SURFACES
    IIZUKA, T
    OKADA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1435 - 1442
  • [42] Dispersion of surface bands and chain coupling at Si and Ge(111) surfaces
    Bussetti, G.
    Goletti, C.
    Chlaradia, P.
    Rohlfing, M.
    Betti, M. G.
    Bussolotti, F.
    Cirilli, S.
    Mariani, C.
    Kanjilal, A.
    SURFACE SCIENCE, 2008, 602 (07) : 1423 - 1427
  • [43] Formation of Si clusters and their role in homoepitaxial growth on Si(111)-7 x 7 surfaces
    Ho, MS
    Hwang, IS
    Tsong, TT
    SURFACE SCIENCE, 2004, 564 (1-3) : 93 - 107
  • [44] Preparation and Characterization of an Ordered 1-Dodecanethiol Monolayer on Bare Si(111) Surface
    Lou, Jie Ling
    Shiu, Hung Wei
    Chang, Lo Yueh
    Wu, Chia Ping
    Soo, Yun-Liang
    Chen, Chia-Hao
    LANGMUIR, 2011, 27 (07) : 3436 - 3441
  • [45] SPECTROSCOPIC ELLIPSOMETRY STUDY OF (111)SI AND (100)SI SURFACES ETCHED IN AQUEOUS KOH SOLUTION
    ADACHI, S
    IKEGAMI, T
    UTANI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4398 - 4403
  • [46] DFT Study of Spin States on Bare and Partially Hydrogenated Si(111) and Si(100) Surfaces
    Frankcombe, Terry J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (46) : 26926 - 26930
  • [47] The preparation of ideally ordered flat H-Si(111) surfaces
    Munford, ML
    Cortès, R
    Allongue, P
    SENSORS AND MATERIALS, 2001, 13 (05) : 259 - 269
  • [48] Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces
    Zhachuk, R.
    Teys, S.
    Coutinho, J.
    Rayson, M. J.
    Briddon, P. R.
    APPLIED PHYSICS LETTERS, 2014, 105 (17)
  • [49] Copper electrodeposition onto hydrogenated Si(111) surfaces: Influence of thiourea
    Quiroga Arganaraz, Ma. Bernarda
    Vazquez, Cecilia I.
    Lacconi, Gabriela I.
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2010, 639 (1-2) : 95 - 101
  • [50] Formation and reactivity of high quality halogen terminated Si(111) surfaces
    Eves, BJ
    Lopinski, GP
    SURFACE SCIENCE, 2005, 579 (2-3) : L89 - L96
12345