首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
Quantitative IR Readout of Fulgimide Monolayer Switching on Si(111) Surfaces
被引:9
|
作者
:
de Villeneuve, Catherine Henry
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytech, CNRS, F-91128 Palaiseau, France
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
de Villeneuve, Catherine Henry
[
2
]
Michalik, Fabian
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Ecole Polytech, CNRS, F-91128 Palaiseau, France
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Michalik, Fabian
[
1
,
2
]
Chazalviel, Jean Noel
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytech, CNRS, F-91128 Palaiseau, France
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Chazalviel, Jean Noel
[
2
]
Rueck-Braun, Karola
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Rueck-Braun, Karola
[
1
]
Allongue, P.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytech, CNRS, F-91128 Palaiseau, France
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
Allongue, P.
[
2
]
机构
:
[1]
Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
[2]
Ecole Polytech, CNRS, F-91128 Palaiseau, France
来源
:
ADVANCED MATERIALS
|
2013年
/ 25卷
/ 03期
关键词
:
fulgimide compounds;
photochromism;
organic monolayers;
silicon;
D O I
:
10.1002/adma.201201546
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
Creating photoactive monolayers of photochromes is of considerable technological interest. This paper describes the construct of fulgimide monolayers on silicon surfaces and presents a quantitative IR analysis studies of their composition and switching properties. The scheme on top shows the structure of the starting C-form terminated Si(111) surface and the graph below sketches the surface composition at the photostationnary states under visisble and UV irradiation, as derived from in situ IR spectroscopy after several UV/vis irradiation cycles. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:416 / 421
页数:6
相关论文
共 50 条
[31]
One monolayer of gold on an Si(111) surface: surface phases and phase transitions
Khramtsova, EA
论文数:
0
引用数:
0
h-index:
0
机构:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
Khramtsova, EA
Sakai, H
论文数:
0
引用数:
0
h-index:
0
机构:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
Sakai, H
Hayashi, K
论文数:
0
引用数:
0
h-index:
0
机构:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
Hayashi, K
Ichimiya, A
论文数:
0
引用数:
0
h-index:
0
机构:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
Ichimiya, A
SURFACE SCIENCE,
1999,
433
: 405
-
409
[32]
Ammonia modification of oxide-free Si(111) surfaces
Chopra, Tatiana Peixoto
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Chopra, Tatiana Peixoto
Longo, Roberto C.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Longo, Roberto C.
Cho, Kyeongjae
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Cho, Kyeongjae
Chabal, Yves J.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Chabal, Yves J.
SURFACE SCIENCE,
2016,
650
: 285
-
294
[33]
Phase transitions in ultrathin Al films on Si(111) surfaces
Groger, R
论文数:
0
引用数:
0
h-index:
0
机构:
FORSCHUNGSZENTRUM KARLSRUHE, INST MAT FORSCH 1, D-76021 KARLSRUHE, GERMANY
FORSCHUNGSZENTRUM KARLSRUHE, INST MAT FORSCH 1, D-76021 KARLSRUHE, GERMANY
Groger, R
vonBlanckenhagen, P
论文数:
0
引用数:
0
h-index:
0
机构:
FORSCHUNGSZENTRUM KARLSRUHE, INST MAT FORSCH 1, D-76021 KARLSRUHE, GERMANY
FORSCHUNGSZENTRUM KARLSRUHE, INST MAT FORSCH 1, D-76021 KARLSRUHE, GERMANY
vonBlanckenhagen, P
THIN SOLID FILMS,
1996,
281
: 73
-
75
[34]
Co growth on Si(001) and Si(111) surfaces: Interfacial interaction and growth dynamics
Pan, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Pan, JS
Liu, RS
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Liu, RS
Zhang, Z
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Zhang, Z
Poon, SW
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Poon, SW
Ong, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Ong, WJ
Tok, ES
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
Tok, ES
SURFACE SCIENCE,
2006,
600
(06)
: 1308
-
1318
[35]
MEAN RESIDENCE TIME OF LI ATOMS ADSORBED ON SI(100) AND SI(111) SURFACES
KLEINE, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
KLEINE, H
ECKHARDT, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
ECKHARDT, M
FICK, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
FICK, D
SURFACE SCIENCE,
1995,
329
(1-2)
: 71
-
76
[36]
Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
Kokhanenko, A. P.
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Tomsk State Univ, Tomsk, Russia
Natl Res Tomsk State Univ, Tomsk, Russia
Kokhanenko, A. P.
Lozovoy, K. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Tomsk State Univ, Tomsk, Russia
Natl Res Tomsk State Univ, Tomsk, Russia
Lozovoy, K. A.
Voitsekhovskii, A. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Tomsk State Univ, Tomsk, Russia
Natl Res Tomsk State Univ, Tomsk, Russia
Voitsekhovskii, A. V.
RUSSIAN PHYSICS JOURNAL,
2018,
60
(11)
: 1871
-
1879
[37]
Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
A. P. Kokhanenko
论文数:
0
引用数:
0
h-index:
0
机构:
National Research Tomsk State University,
A. P. Kokhanenko
K. A. Lozovoy
论文数:
0
引用数:
0
h-index:
0
机构:
National Research Tomsk State University,
K. A. Lozovoy
A. V. Voitsekhovskii
论文数:
0
引用数:
0
h-index:
0
机构:
National Research Tomsk State University,
A. V. Voitsekhovskii
Russian Physics Journal,
2018,
60
: 1871
-
1879
[38]
Arsenic adatom structures for Ge(111) and Si(111) surfaces: First-principles calculations
Cheng, C
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS SOLIDES LAB,CNRS,F-75252 PARIS 05,FRANCE
PHYS SOLIDES LAB,CNRS,F-75252 PARIS 05,FRANCE
Cheng, C
Kunc, K
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS SOLIDES LAB,CNRS,F-75252 PARIS 05,FRANCE
PHYS SOLIDES LAB,CNRS,F-75252 PARIS 05,FRANCE
Kunc, K
SURFACE SCIENCE,
1996,
365
(02)
: 383
-
393
[39]
Second harmonic generation spectroscopy of chemically modified Si(111) surfaces
Mitchell, SA
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Mitchell, SA
Mehendale, M
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Mehendale, M
Villeneuve, DM
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Villeneuve, DM
Boukherroub, R
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
Boukherroub, R
SURFACE SCIENCE,
2001,
488
(03)
: 367
-
378
[40]
Growth mechanism and morphology of Ge on Pb covered Si(111)surfaces
Hwang, IS
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Phys, Taipei, Taiwan
Hwang, IS
Chang, TC
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Phys, Taipei, Taiwan
Chang, TC
Tsong, TT
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Phys, Taipei, Taiwan
Acad Sinica, Inst Phys, Taipei, Taiwan
Tsong, TT
SURFACE SCIENCE,
1998,
410
(2-3)
: L741
-
L747
←
1
2
3
4
5
→