Quantitative IR Readout of Fulgimide Monolayer Switching on Si(111) Surfaces

被引：9
|
作者：
de Villeneuve, Catherine Henry [2 ]
Michalik, Fabian [1 ,2 ]
Chazalviel, Jean Noel [2 ]
Rueck-Braun, Karola [1 ]
Allongue, P. [2 ]
机构：
[1] Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany
[2] Ecole Polytech, CNRS, F-91128 Palaiseau, France
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 03期
关键词：
fulgimide compounds; photochromism; organic monolayers; silicon;
D O I：
10.1002/adma.201201546
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Creating photoactive monolayers of photochromes is of considerable technological interest. This paper describes the construct of fulgimide monolayers on silicon surfaces and presents a quantitative IR analysis studies of their composition and switching properties. The scheme on top shows the structure of the starting C-form terminated Si(111) surface and the graph below sketches the surface composition at the photostationnary states under visisble and UV irradiation, as derived from in situ IR spectroscopy after several UV/vis irradiation cycles. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：416 / 421
页数：6
相关论文
共 50 条
  • [1] Nucleation and growth of Si on Pb monolayer covered Si(111) surfaces
    Chang, Tien-Chih
    Chatterjee, Kuntal
    Chang, Shih-Hsin
    Lee, Yi-Hsien
    Hwang, Ing-Shouh
    SURFACE SCIENCE, 2011, 605 (13-14) : 1249 - 1256
  • [2] Monolayer-induced band shifts at Si(100) and Si(111) surfaces
    Maekinen, A. J.
    Kim, Chul-Soo
    Kushto, G. P.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [3] Monolayer nitridation of Si(001) surfaces
    Morita, Y
    Ishida, T
    Tokumoto, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2459 - 2462
  • [4] Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces
    Asaoka, H
    Cherepanov, V
    Voigtländer, B
    SURFACE SCIENCE, 2005, 588 (1-3) : 19 - 25
  • [5] The interaction of carbon with Si(111):As and Si(111):H surfaces, a theoretical study
    Mutombo, P.
    Chab, V.
    SURFACE SCIENCE, 2009, 603 (04) : 590 - 596
  • [6] Migration of Si adatom on strained Si(111) surfaces
    Hoshino, T
    Hata, M
    Tsuda, M
    SURFACE SCIENCE, 2001, 481 (1-3) : 205 - 214
  • [7] Switching the Charge State of Individual Surface Atoms at Si(111)-√3 x √3:B Surfaces
    Eom, Daejin
    Moon, Chang-Youn
    Koo, Ja-Yong
    NANO LETTERS, 2015, 15 (01) : 398 - 402
  • [8] Dynamic behavior of Si magic clusters on Si(111) surfaces
    Hwang, IS
    Ho, MS
    Tsong, TT
    SURFACE SCIENCE, 2002, 514 (1-3) : 309 - 318
  • [9] Atomic and molecular processes on Si(001) and Si(111) surfaces
    Terakura, K
    Yamasaki, T
    Uda, T
    Stich, I
    SURFACE SCIENCE, 1997, 386 (1-3) : 207 - 215
  • [10] Surface melting of vicinal Si(111) surfaces
    Natori, A
    Harada, H
    SURFACE SCIENCE, 1999, 438 (1-3) : 162 - 172
12345