Numerical and experimental analysis of pulsed excimer laser processing of silicon carbide

被引：54
作者：
Dutto, C
Fogarassy, E
Mathiot, D
机构：
[1] CNRS, Lab PHASE, F-67037 Strasbourg 2, France
[2] STMicroelect, F-37071 Tours, France
来源：
APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期
关键词：
silicon carbide; excimer laser; melting; simulation; doping;
D O I：
10.1016/S0169-4332(01)00518-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we investigated the thermal behaviour of both crystalline and amorphous SiC under pulsed excimer laser treatment at different wavelengths (193, 248 and 308 nm) and for pulse durations ranging from 20 to 200 ns. Numerical analysis was performed by solving the heat flow equation and using the appropriate optical and thermal parameters for SiC. The reasonable agreement found between the simulations and experimental results confirms the adequacy of such a type of numerical analysis for predicting the thermal behaviour of SiC under excimer laser processing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：362 / 366
页数：5
相关论文
共 24 条
[1]   ACTIVATION OF ION-IMPLANTED DOPANTS IN ALPHA-SIC [J].
AHMED, S ;
BARBERO, CJ ;
SIGMON, TW .
APPLIED PHYSICS LETTERS, 1995, 66 (06) :712-714
[2]  
BAERI P, 1999, INT J THERMOPHYS, V20
[3]  
BOHER P, COMMUNICATION
[4]   MELTING AND DAMAGE PRODUCTION IN SILICON-CARBIDE UNDER PULSED LASER IRRADIATION [J].
BOURDELLE, KK ;
CHECHENIN, NG ;
AKHMANOV, AS ;
POROIKOV, AY ;
SUVOROV, AV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (02) :399-406
[5]   ANNEALING OF IMPLANTATION DAMAGE AND REDISTRIBUTION OF IMPURITIES IN SIC USING A PULSED EXCIMER LASER [J].
CHOU, SY ;
CHANG, Y ;
WEINER, KH ;
SIGMON, TW ;
PARSONS, JD .
APPLIED PHYSICS LETTERS, 1990, 56 (06) :530-532
[6]  
Choyke W. J., 1985, Handbook of Optical Constants of Solids, P587
[7]   A THERMAL DESCRIPTION OF THE MELTING OF C-SILICON AND A-SILICON UNDER PULSED EXCIMER LASERS [J].
DEUNAMUNO, S ;
FOGARASSY, E .
APPLIED SURFACE SCIENCE, 1989, 36 (1-4) :1-11
[8]  
DMITRIEV VA, 1998, SIC MAT DEVICES SEMI, V52
[9]   FORMATION OF A P-N-JUNCTION IN SILICON-CARBIDE BY ALUMINUM DOPING AT ROOM-TEMPERATURE USING A PULSED-LASER DOPING METHOD [J].
ERYU, O ;
OKUYAMA, Y ;
NAKASHIMA, K ;
NAKATA, T ;
WATANABE, M .
APPLIED PHYSICS LETTERS, 1995, 67 (14) :2052-2053
[10]   Formation of an ohmic electrode in SiC using a pulsed laser irradiation method [J].
Eryu, O ;
Kume, T ;
Nakashima, K ;
Nakata, T ;
Inoue, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4) :419-421
123