Investigating Internal Gettering of Iron at Grain Boundaries in Multicrystalline Silicon via Photoluminescence Imaging

被引：26

作者：

Liu, AnYao ^{[1
]}

Walter, Daniel ^{[1
]}

Phang, Sieu Pheng ^{[1
]}

Macdonald, Daniel ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

Grain boundary (GB); internal gettering; iron; multicrystalline silicon; photoluminescence (PL) imaging; CONTAMINATION; GROWTH; INGOT;

D O I：

10.1109/JPHOTOV.2012.2195550

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we present measurements and modeling of the reduction in dissolved iron Fe; concentrations near grain boundaries in multicrystalline silicon (mc-Si) wafers. The measurements of the interstitial Fe concentrations are obtained via photoluminescence images taken before and after iron-boron pair dissociation. A simple diffusion-capture model was developed to characterize the removal of interstitial Fe by the gettering sites. The model is based on a numerical solution to the 1-D diffusion equation with two fitting parameters: the diffusion length of dissolved Fe atoms and the effective gettering velocity at the gettering site. By comparing the simulation with a controlled phosphorous gettering process, the model is shown to give good estimation of the diffusion length of Fe atoms. For as-cut multicrystalline silicon wafers from different parts of the ingot, that is, wafers with different average dissolved Fe concentrations [Fe-i], the diffusion lengths of Fe atoms are found to decrease with decreasing average [Fe-i]. This suggests the presence of relaxation precipitation during the internal gettering of dissolved Fe by the grain boundaries in mc-Si during ingot cooling.

引用

页码：479 / 484

页数：6

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