Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

被引：10

作者：

Pociask, M. ^{[1
]}

Izhnin, I. I. ^{[2
]}

Dvoretsky, S. A. ^{[3
]}

Mikhailov, N. N. ^{[3
]}

Sidorov, Yu G. ^{[3
]}

Varavin, V. S. ^{[3
]}

Mynbaev, K. D. ^{[4
]}

Sheregii, E. ^{[1
]}

机构：

[1] Rzeszow Univ, Inst Phys, PL-35310 Rzeszow, Poland

[2] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 09期

关键词：

D O I：

10.1088/0268-1242/23/9/095001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion milling on electrical properties of vacancy- and arsenic-doped p-Hg(1-x)Cd(x)Te (MCT) (x similar to 0.22) has been studied. Samples for the study were fabricated by thermal annealing of n-type heterostructures grown by molecular beam epitaxy ( MBE) on GaAs. Their behaviour under ion milling was compared to that of MCT bulk samples and films grown by liquid and vapour phase epitaxy. Residual donor concentration in the MBE-grown structures was found to be of the order of 10(15) cm(-3), which is typical for MCT. Unique to the MBE structures was high electron concentration (similar to 10(17) cm(-3)) straight after the milling. We suppose that this fact reflected ion-milling-induced activation of an initially neutral defect, which was formed in the heterostructures during the growth. A possible nature of the defect is discussed.

引用

页数：5

共 26 条

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