High-power subpicosecond harmonically mode-locked Yb:YAG laser with pulse repetition rate up to 240 GHz

被引：13

作者：

Chen, Y. F. ^{[1
]}

Zhuang, W. Z. ^{[1
]}

Liang, H. C. ^{[1
]}

WHuang, G. ^{[1
]}

Su, K. W. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

LASER PHYSICS LETTERS | 2013年 / 10卷 / 01期

关键词：

FIBER LASER; GENERATION; LOCKING; CRYSTAL;

D O I：

10.1088/1612-2011/10/1/015803

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the operation of a high-power diode-pumped Yb:YAG self-mode-locked microchip laser with a pulse repetition rate of up to 240 GHz. The gain medium is coated to form a cavity mirror and to act as an etalon for achieving harmonic mode locking. A diamond heat spreader is employed to reduce the thermal effects for power scale-up. At an absorbed pump power of 8.3 W, an average output power of 4.6 W is achieved with a pulse duration of 630 fs and a repetition rate of 240 GHz.

引用

页数：4

共 26 条

[1]

Andrew MW., 2009, Ultrafast Optics

[2] Femtosecond Ti:sapphire ring laser with a 2-GHz repetition rate and its application in time-resolved spectroscopy [J].

Bartels, A ;

Dekorsy, T ;

Kurz, H .

OPTICS LETTERS, 1999, 24 (14) :996-998

[3] 10-GHz Self-Referenced Optical Frequency Comb [J].

Bartels, Albrecht ;

Heinecke, Dirk ;

Diddams, Scott A. .

SCIENCE, 2009, 326 (5953) :681-681

[4] Spontaneous subpicosecond pulse formation with pulse repetition rate of 80 GHz in a diode-pumped Nd:SrGdGa3O7 disordered crystal laser [J].

Chen, Y. F. ;

Liang, H. C. ;

Tung, J. C. ;

Su, K. W. ;

Zhang, Y. Y. ;

Zhang, H. J. ;

Yu, H. H. ;

Wang, J. Y. .

OPTICS LETTERS, 2012, 37 (04) :461-463

[5]

Chen Y.F., 2011, OPT LETT, V36, P23

[6] Review of terahertz and subterahertz wireless communications [J].

Federici, John ;

Moeller, Lothar .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)

[7] Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 μm [J].

Gosset, C. ;

Merghem, K. ;

Martinez, A. ;

Moreau, G. ;

Patriarche, G. ;

Aubin, G. ;

Ramdane, A. ;

Landreau, J. ;

Lelarge, F. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[8] 0.6 WCWGaInNAsvertical external-cavity surface emitting laser operating at 1.32 μm [J].

Hopkins, JM ;

Smith, SA ;

Jeon, CW ;

Sun, HD ;

Burns, D ;

Calvez, S ;

Dawson, MD ;

Jouhti, T ;

Pessa, M .

ELECTRONICS LETTERS, 2004, 40 (01) :30-31

[9] Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser [J].

Klopp, P. ;

Griebner, U. ;

Zorn, M. ;

Weyers, M. .

APPLIED PHYSICS LETTERS, 2011, 98 (07)

[10] 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm [J].

Korpijarvi, Ville-Markus ;

Leinonen, Tomi ;

Puustinen, Janne ;

Harkonen, Antti ;

Guina, Mircea D. .

OPTICS EXPRESS, 2010, 18 (25) :25633-25641

← 1 2 3 →