Enhanced emission efficiency of green InGaN/GaN multiple quantum wells by surface plasmon of Au nanoparticles

被引：11
作者：
Kwon, Min-Ki [1 ]
Kim, Ja-Yeon [2 ]
Park, Seong-Ju [3 ]
机构：
[1] Chosun Univ, Dept Photon Engn, Kwangju 501759, South Korea
[2] Korea Photon Technol Inst, LED Team, Kwangju 500460, South Korea
[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷
基金：
新加坡国家研究基金会;
关键词：
Nanostructures; Metalorganic chemical vapor deposition; Quantum wells; Nitrides; Semiconducting III-V materials; Light emitting diodes; LIGHT-EMITTING-DIODES; PHOTOLUMINESCENCE; FIELDS; LAYERS; GAN;
D O I：
10.1016/j.jcrysgro.2012.09.041
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the effect of surface plasmon on the light emission efficiency of green InGaN/GaN multiple quantum wells (MQWs). Internal quantum efficiency of green MQW with Au nanoparticles is increased by 6.9 times, compared to that of green MQW without Au nanoparticles. Transmission spectrum of Au nanoparticles shows that the absorption peak at 2.3 eV is due to the excitation of dipole plasmon modes in Au nanoparticles and this absorption energy is nearly matched to the photoluminescence emission energy of green MQW. These results show that the increase in internal quantum efficiency of green MQW with Au nanoparticles can be attributed to the coupling between surface plasmon of Au nanoparticles and exciton of green MQW. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：124 / 127
页数：4
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