Turbostratic stacked CVD graphene for high-performance devices

被引：40

作者：

Uemura, Kohei ^{[1
]}

Ikuta, Takashi ^{[1
]}

Maehashi, Kenzo ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Inst Engn, Koganei, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 03期

关键词：

HIGH-QUALITY; FILMS; TRANSPORT;

D O I：

10.7567/JJAP.57.030311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000cm(2)V(-1)s(-1) at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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