Magnetically doped semiconducting topological insulators

被引：75

作者：

Kou, X. F. ^{[1
]}

Jiang, W. J. ^{[1
]}

Lang, M. R. ^{[1
]}

Xiu, F. X. ^{[2
]}

He, L. ^{[1
]}

Wang, Y. ^{[3
,4
]}

Yu, X. X. ^{[1
]}

Fedorov, A. V. ^{[5
]}

Zhang, P. ^{[5
]}

Wang, K. L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

[3] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source Div, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 06期

关键词：

FIELD-CONTROLLED FERROMAGNETISM; PHASE-TRANSITION; SURFACE-STATES; SMALL POLARON; THIN-FILMS; BI2SE3; MECHANISM; TRANSPORT; BI2TE3; CHARGE;

D O I：

10.1063/1.4754452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time invariant behaviors of topological insulators are expected to be changed with magnetic doping, which motivate the present study. Here, we show that for Bi2-xCrxSe3 (0.01 <= x <= 0.3) thin films grown on Si, the non-trivial topological surface state is weakened by the Cr dopants. The band gap of surface is opened and monotonically increased with Cr concentration up to similar to 100 meV at 10 K. Meanwhile, the semiconducting behavior is well-maintained in the bulk owing to the reduction of background doping by means of a modified growth strategy and an in situ passivation method. Besides, we also observe the existence of unconventional ferromagnetic ordering below 35 K, for which the Curie-Weiss Law and conventional/modified Arrott equations do not apply. These observations may further help us investigate extraordinary magneto-electric effect in topological insulators, and the result will also pave the way for realizing the quantized anomalous Hall effect. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754452]

引用

页数：6

共 61 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].

Akai, H .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3002-3005

[2]

Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]

[3] CRITERION FOR FERROMAGNETISM FROM OBSERVATIONS OF MAGNETIC ISOTHERMS [J].

ARROTT, A .

PHYSICAL REVIEW, 1957, 108 (06) :1394-1396

[4] APPROXIMATE EQUATION OF STATE FOR NICKEL NEAR ITS CRITICAL TEMPERATURE [J].

ARROTT, A ;

NOAKES, JE .

PHYSICAL REVIEW LETTERS, 1967, 19 (14) :786-&

[5] Side-jump mechanism for the Hall effect of ferromagnets [J].

Berger, L. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (11) :4559-4566

[6] Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].

Bernevig, B. Andrei ;

Hughes, Taylor L. ;

Zhang, Shou-Cheng .

SCIENCE, 2006, 314 (5806) :1757-1761

[7] Quantum spin hall effect [J].

Bernevig, BA ;

Zhang, SC .

PHYSICAL REVIEW LETTERS, 2006, 96 (10)

[8] Etching of silicon by the RCA Standard Clean 1 [J].

Celler, GK ;

Barr, DL ;

Rosamilia, JM .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (01) :47-49

[9] Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons [J].

Cha, Judy J. ;

Williams, James R. ;

Kong, Desheng ;

Meister, Stefan ;

Peng, Hailin ;

Bestwick, Andrew J. ;

Gallagher, Patrick ;

Goldhaber-Gordon, David ;

Cui, Yi .

NANO LETTERS, 2010, 10 (03) :1076-1081

[10]

Chang C.-Z., ARXIV11084754

← 1 2 3 4 5 6 7 →