Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films

被引：22

作者：

Mei, F. H. ^{[1
]}

Tang, N. ^{[1
]}

Wang, X. Q. ^{[1
]}

Duan, J. X. ^{[1
]}

Zhang, S. ^{[1
]}

Chen, Y. H. ^{[2
]}

Ge, W. K. ^{[1
,3
]}

Shen, B. ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Crystal symmetry - III-V semiconductors - Indium compounds;

D O I：

10.1063/1.4754626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Swirly photocurrent in InN films arising from reciprocal spin Hall effect (RSHE) is observed under normal incidence of circularly polarized light at room temperature. It is found that the swirly current is a superposition of the RSHE currents from the surface and bulk layer of InN. The effective spin-orbit coupling coefficient (SOC) in the surface electron layer is suggested to be of opposite sign to that in the bulk. The results constitute a comprehensive understanding of the role of surface electron layer in spin transport in InN. This work reveals an approach to explore spin-orbit coupling in systems like InN. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754626]

引用

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