Quasi-TE00 singlemode optical waveguides for electro-optical modulation at 1.3 mu m using standard SIMOX material

A standard SIMOX substrate with 0.2 mu m silicon film can be used for integrated optics. A lateral P+-I-N+ structure in the silicon film is proposed to obtain electro-optical phase modulation by carrier injection. Field confinement is ensured by a rib-loaded geometry. Simulations have been performed to estimate waveguide losses for such 2D-guiding structures suitable for phase modulation. Quasi-singlemode propagation with low losses in the doped regions and low additional loss under injection conditions is predicted.