Photoluminescence and photoluminescence excitation spectra of In0.2Ga0.8N-GaN quantum wells:: Comparison between experimental and theoretical studies

被引：16

作者：

Jiang, HT ^{[1
]}

Minsky, M

Keller, S

Hu, E

Singh, J

DenBaars, SP

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Sci, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 10期

基金：

美国国家科学基金会;

关键词：

photoluminescence; piezoelectricity; quantum wells; semiconductor device modeling;

D O I：

10.1109/3.792574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN-GaN represents an important heterostructure with applications in electronics and optoelectronics. It also offers a system where we can study the effects of interface roughness, alloy clustering, and the piezoelectric effect. In this paper, we examine how these factors influence the photoluminescence and excitation photoluminescence in InGaN-GaN quantum wells. We examine the Stokes shift as a function of the excitation level and doping and relate the values to the piezoelectric effect and disorder in the system. Detailed comparisons are made with experimental results.

引用

页码：1483 / 1490

页数：8

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