Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons

被引：7

作者：

Cellere, G. ^{[1
,2
]}

Paccagnella, A. ^{[1
,2
]}

Visconti, A. ^{[3
]}

Beltrami, S. ^{[3
]}

Schwank, J. ^{[4
]}

Shaneyfelt, A. ^{[4
]}

Lambert, D. ^{[5
]}

Paillet, P. ^{[6
]}

Ferlet-Cavrois, V. ^{[6
]}

Baggio, J. ^{[6
]}

Harboe-Sorensen, R. ^{[7
]}

Blackmore, E. ^{[8
]}

Virtanen, A. ^{[9
]}

Fuochi, P. ^{[10
]}

机构：

[1] Univ Padua, Dipartimento Ingn Informaz, I-35100 Padua, Italy

[2] Ist Nazl Fis Nucl, Sez Padova, I-35100 Padua, Italy

[3] Numonyx, R&D Technol Dev, I-20041 Agrate Brianza, MI, Italy

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

[5] EADS Nucletudes, F-91944 Courtaboeuf, France

[6] CEA, DIF, F-91680 Bruyeres Le Chatel, France

[7] European Space Agcy, ESTEC, NL-2200 AG Noordwijk, Netherlands

[8] TRIUMF, Vancouver, BC V6T 2A3, Canada

[9] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland

[10] CNR, ISOF, I-40129 Bologna, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Floating gate memories; high energy protons; single event effects; space radiation;

D O I：

10.1109/TNS.2008.2007799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions.

引用

页码：2904 / 2913

页数：10

共 53 条

[1] Geant4 developments and applications [J].

Allison, J ;

Amako, K ;

Apostolakis, J ;

Araujo, H ;

Dubois, PA ;

Asai, M ;

Barrand, G ;

Capra, R ;

Chauvie, S ;

Chytracek, R ;

Cirrone, GAP ;

Cooperman, G ;

Cosmo, G ;

Cuttone, G ;

Daquino, GG ;

Donszelmann, M ;

Dressel, M ;

Folger, G ;

Foppiano, F ;

Generowicz, J ;

Grichine, V ;

Guatelli, S ;

Gumplinger, P ;

Heikkinen, A ;

Hrivnacova, I ;

Howard, A ;

Incerti, S ;

Ivanchenko, V ;

Johnson, T ;

Jones, F ;

Koi, T ;

Kokoulin, R ;

Kossov, M ;

Kurashige, H ;

Lara, V ;

Larsson, S ;

Lei, F ;

Link, O ;

Longo, F ;

Maire, M ;

Mantero, A ;

Mascialino, B ;

McLaren, I ;

Lorenzo, PM ;

Minamimoto, K ;

Murakami, K ;

Nieminen, P ;

Pandola, L ;

Parlati, S ;

Peralta, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (01) :270-278

[2]

[Anonymous], 2007, INT TECHNOLOGY ROADM

[3]

[Anonymous], FLASH MEMORIES

[4] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J].

AUSMAN, GA ;

MCLEAN, FB .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :173-175

[5]

Barthès JPA, 1997, PROCEEDINGS OF SECOND INTERNATIONAL WORKSHOP ON CSCW IN DESIGN, P1

[6] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES [J].

BENEDETTO, JM ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1318-1323

[7] Operation of the TRIUMF (20-500 MeV) Proton Irradiation Facility [J].

Blackmore, EW .

2000 IEEE RADIATION EFFECTS DATA WORKSHOP - WORKSHOP RECORD, 2000, :1-5

[8] Angular dependence of heavy ion effects in Floating Gate memory arrays [J].

Cellere, G. ;

Paccagnella, A. ;

Visconti, A. ;

Bonanomi, M. ;

Harboe-Sorensen, R. ;

Virtanen, A. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2371-2378

[9] Subpicosecond conduction through thin SiO2 layers triggered by heavy ions [J].

Cellere, G ;

Paccagnella, A ;

Visconti, A ;

Bonanomi, M .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (07)

[10] Effect of different total ionizing dose sources on charge loss from programmed floating gate cells [J].

Cellere, G ;

Paccagnella, A ;

Visconti, A ;

Bonanomi, M ;

Candelori, A ;

Lora, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2372-2377

← 1 2 3 4 5 6 →