Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM

被引：0

作者：

Fejfar, A ^{[1
]}

Poruba, A ^{[1
]}

Vanecek, M ^{[1
]}

Kocka, J ^{[1
]}

机构：

[1] TECH UNIV BRNO, FAC CHEM, CR-63700 BRNO, CZECH REPUBLIC

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The newly introduced setup for 'absolute' constant photocurrent method allows measurement of the optical (photocurrent) absorption spectrum, alpha(E), directly in absolute units (cm(-1)) without additional calibration and undisturbed by interference fringes, Computer simulation was performed to demonstrate the precision of the measurement and to explain residual interferences sometimes observed. The residual interferences are shown to be direct fingerprints of an inhomogeneous defect distribution.

引用

页码：304 / 308

页数：5

共 15 条

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