Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

被引：19

作者：

Cheng, Yi ^{[1
,2
]}

Liang, Hongwei ^{[1
]}

Liu, Yang ^{[1
]}

Xia, Xiaochuan ^{[1
]}

Shen, Rensheng ^{[1
]}

Song, Shiwei ^{[1
]}

Wu, Yunfeng ^{[1
,4
]}

Du, Guotong ^{[1
,3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China

[2] Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China

[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

[4] Dalian Nationalities Univ, Coll Sci, Dalian 116600, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Cu-doped Ga2O3 thin film; X-ray diffraction; Optical bandgap; Amorphous phase; Surface morphology; BETA-GA2O3; THIN-FILMS; NANOWIRES; DEPOSITION; STABILITY;

D O I：

10.1016/j.mssp.2013.03.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu-doped Ga2O3 thin films were deposited by electron beam evaporation with subsequent annealing at 1000 degrees C in N-2 and O-2 for 1 h. The influence of the annealing atmosphere on the crystal structure, surface morphology and optical properties of Ga2O3:Cu films was investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and transmittance and photoluminescence (PL) spectroscopy. The optical bandgap deduced from the absorption spectrum was greater for the O-2 annealed than for N-2 annealed samples. In both cases the bandgap was wider than for bulk beta-Ga2O3. The grain size and surface roughness were sensitive to the annealing atmosphere. Results confirmed that the annealed samples were polycrystalline beta-Ga2O3 with some amorphous phase. We hypothesize that annealing in oxygen led to recrystallization of the Ga2O3:Cu film. Annealing treatment improved the crystal quality of Ga2O3:Cu films and the PL intensity of the samples increased. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1303 / 1307

页数：5

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