160-190-GHz monolithic low-noise amplifiers

被引：15

作者：

Kok, YL ^{[1
]}

Wang, H

Huang, TW

Lai, R

Barsky, M

Chen, YC

Sholley, M

Block, T

Streit, DC

Liu, PH

Allen, BR

Samoska, L

Gaier, T

机构：

[1] TRW Co Inc, Space & Elect Grp, Redondo Beach, CA 90278 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 08期

基金：

美国国家航空航天局;

关键词：

high electron mobility transistor (HEMT); LNA; MMIC; noise figure (NF); pseudomorphic (PM) technology;

D O I：

10.1109/75.779912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the results of two 160-190-GHz monolithic low-noise amplifiers (LNA's) fabricated with 0.07-mu m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process, A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 132 to 180 GHz. The same design (second LNA) was also fabricated with a 0.08-mu m gate and a wet etch process, showing a small-signal gain of 6 dB with 6-dB noise figure. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

引用

页码：311 / 313

页数：3

共 15 条

[1] A 1-157 GHz InP HEMT traveling-wave amplifier [J].

Agarwal, B ;

Schmitz, AE ;

Brown, JJ ;

Le, M ;

Lui, M ;

Rodwell, MJW .

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, :21-23

[2]

AUST MV, 1996, IEEE 1996 MICR MILL

[3]

Duh K. H. G., 1991, IEEE Microwave and Guided Wave Letters, V1, P114, DOI 10.1109/75.89081

[4]

GAIER T, 1996, P INT C MILL SUBM WA, V2842, P588

[5] An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz [J].

Lai, R ;

Barsky, M ;

Huang, T ;

Sholley, M ;

Wang, H ;

Kok, YL ;

Streit, DC ;

Block, T ;

Liu, PH ;

Gaier, T ;

Samoska, L .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (11) :393-395

[6] A MONOLITHICALLY INTEGRATED 120-GHZ INGAAS INALAS INP HEMT AMPLIFIER [J].

LAI, R ;

WANG, H ;

TAN, KL ;

STREIT, DC ;

LIU, PH ;

VELEBIR, J ;

CHEN, S ;

BERENZ, J ;

POSPIESZALSKI, MW .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1994, 4 (06) :194-195

[7]

Tan K. L., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P239, DOI 10.1109/IEDM.1991.235458

[8] 94-GHZ 0.1-MU-M T-GATE LOW-NOISE PSEUDOMORPHIC INGAAS HEMTS [J].

TAN, KL ;

DIA, RM ;

STREIT, DC ;

LIN, TY ;

TRINH, TQ ;

HAN, AC ;

LIU, PH ;

CHOW, PMD ;

YEN, HC .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) :585-587

[9] Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers [J].

Wang, H ;

Ng, GI ;

Lai, R ;

Hwang, Y ;

Lo, DCW ;

Dia, R ;

Freudenthal, A ;

Block, T .

IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION, 1996, 143 (05) :361-366

[10] HIGH-PERFORMANCE W-BAND MONOLITHIC PSEUDOMORPHIC INGAAS HEMT LNAS AND DESIGN ANALYSIS METHODOLOGY [J].

WANG, H ;

DOW, GS ;

ALLEN, BR ;

TON, TN ;

TAN, KL ;

CHANG, KW ;

CHEN, T ;

BERENZ, J ;

LIN, TS ;

LIU, PH ;

STREIT, DC ;

BUI, SB ;

RAGGIO, JJ ;

CHOW, PD .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (03) :417-428

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