Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

被引：14

作者：

Endo, Kiyoshi ^{[1
]}

Kato, Kimihiko ^{[1
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷

关键词：

K+ IONS; MOBILITY; SIO2; TRANSPORT; MOTION; NA+;

D O I：

10.7567/1347-4065/aafecf

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physical origin of hysteresis and reduction in sub-threshold slope (S.S.) of Si MOSFETs with atomic layer deposition (ALD) La2O3 as a gate insulator is experimentally examined through the electrical measurements of the time and temperature dependencies. Hysteresis of capacitancevoltage (C-V) curves in Al/La2O3/Si MOS capacitors disappears at low temperature, while that of the polarization-voltage (P-V) curves in TiN/La2O3 TiN metal-insulator-metal capacitors remains. In TiN/TiN/La2O3/Si MOSFETs, apparent S.S. improvement with longer measurement time and the monotonic increase in the drain current (I-d) over 10(3) s or longer are observed. Also, faster response time of the I-d increase and the apparent S.S. improvement are also found at higher measurement temperature. These results strongly suggest that drift of any mobile ions in ALD La2O3 films is responsible for the observed hysteresis and S.S. reduction, rather that ferroelectricity of La2O3. (C) 2019 The Japan Society of Applied Physics

引用

页数：5