Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

被引：0

作者：

Grmela, L ^{[1
]}

Kala, J ^{[1
]}

Tománek, P ^{[1
]}

机构：

[1] Brno Univ Technol, Fac Elect Engn & Commun, Dept Phys, Technicka 8, Brno 61600, Czech Republic

来源：

PHOTONICS, DEVICES, AND SYSTEMS III | 2006年 / 6180卷

关键词：

optical phenomena; SNOM; InAs/GaAs; quantum dot; artificial molecule;

D O I：

10.1117/12.675867

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

引用

页数：6

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