Field emission enhancement of diamond tips utilizing boron doping and surface treatment

被引：26

作者：

Wisitsora-at, A ^{[1
]}

Kang, WP ^{[1
]}

Davidson, JL ^{[1
]}

Gurbuz, Y ^{[1
]}

Kerns, DV ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

关键词：

diamond; electron emission; surface treatment; vacuum microelectronic;

D O I：

10.1016/S0925-9635(99)00008-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A practical field emission enhancement technique for diamond tips with sp(2) content utilizing boron doping and surface treatment, achieving a very low turn-on electric field of 1 V/mu m, has been developed. The effects of surface treatment and boron doping on electron field emission from an array of micropatterned polycrystalline diamond microtips with sp(2) content have been systematically investigated. Regardless of doping, the field emission characteristics of diamond tips are significantly enhanced and the turn-on electric field is reduced more than 60% after surface treatment. Likewise, regardless of surface treatment, the turn-on electric field of the diamond tips with sp(2) content decreases substantially with boron doping. Possible mechanisms responsible for the held emission enhancement are an increase in the field enhancement factor due to hole accumulation via the formation of cascaded sp(2)-diamond-sp(2) embedded microstructures and field forming process with enhanced hole accumulation after surface treatment. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：1220 / 1224

页数：5

共 13 条

[1] Field emission properties of diamond films of different qualities [J].

Fox, NA ;

Wang, WN ;

Davis, TJ ;

Steeds, JW ;

May, PW .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2337-2339

[2] The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces [J].

Humphreys, TP ;

Thomas, RE ;

Malta, DP ;

Posthill, JB ;

Mantini, MJ ;

Rudder, RA ;

Hudson, GC ;

Markunas, RJ ;

Pettenkofer, C .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1257-1259

[3] Physical characterization of diamond pyramidal microtip emitters [J].

Kang, WP ;

Davidson, JL ;

George, MA ;

Milosavljevic, I ;

Li, Q ;

Xu, JF ;

Kerns, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02) :460-463

[4] Micropatterned polycrystalline diamond field emitter vacuum diode arrays [J].

Kang, WP ;

Davidson, JL ;

Howell, M ;

Bhuva, B ;

Kinser, DL ;

Kerns, DV ;

Li, Q ;

Xu, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2068-2071

[5]

KANG WP, 1998, J VAC SCI TECHNOL B, V16, P460

[6] Negative electron affinity mechanism for diamond surfaces [J].

Krainsky, IL ;

Asnin, VM .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2574-2576

[7] Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films [J].

Lee, JS ;

Liu, KS ;

Lin, IN .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) :3310-3313

[8] Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process [J].

Lee, JS ;

Liu, KS ;

Lin, IN .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :554-556

[9] Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films [J].

Nagao, M ;

Kondo, T ;

Gotoh, Y ;

Tsuji, H ;

Ishikawa, J ;

Miyata, K ;

Kobashi, K .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2806-2808

[10] COHERENT SCATTERING OF HOT ELECTRONS IN GOLD FILMS [J].

SIMMONS, JG ;

VERDERBE.RR ;

LYTOLLIS, J ;

LOMAX, R .

PHYSICAL REVIEW LETTERS, 1966, 17 (13) :675-&

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