Ti-O Binding States of Resistive Switching TiO2 Thin Films Prepared by Reactive Magnetron Sputtering

被引：12

作者：

Lee, Kwang Bae ^{[1
]}

Lee, Kyung Haeng ^{[1
]}

Cha, Jeong Ok ^{[2
]}

Ahn, Jeung Sun ^{[2
]}

机构：

[1] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 04期

关键词：

TiO2; RRAM; Sputtering method; XPS;

D O I：

10.3938/jkps.53.1996

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The relations of tire Ti-O binding states to the resistive switching behaviors of TiO2 thin films have been investigated. TiO2 thin films in a Pt/TiO2/Pt structure were prepared by reactive magnetron sputtering with various preparation conditions, such as the oxygen partial pressure (P(O-2)) and the substrate temperature (T-s). At the optimized preparation conditions for reproducible resistive switching TiO2 thin films (T-s = 100 degrees C and P(O-2) = 0.1 mTorr), the O/Ti ratio in the bulk was nearly stoichiometric, 1.95, but, the surface Ti-O binding state was heavily oxidized ill the form of TiO2.5. We suggest that the molar fraction of the Ti2O3 in the bulk is related to the reproducible resistive switching behaviors, which, ill turn, may be related to tire filamentary mechanism ill TiO2 thin films.

引用

页码：1996 / 2001

页数：6

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