Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain

被引：81

作者：

Carroll, Lee ^{[1
]}

Friedli, Peter ^{[1
]}

Neuenschwander, Stefan ^{[1
]}

Sigg, Hans ^{[1
]}

Cecchi, Stefano ^{[2
]}

Isa, Fabio ^{[2
]}

Chrastina, Daniel ^{[2
]}

Isella, Giovanni ^{[2
]}

Fedoryshyn, Yuriy ^{[3
]}

Faist, Jerome ^{[3
]}

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Politecn Milan, L NESS, Dipartimento Fis, I-22100 Como, Italy

[3] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 05期

关键词：

EFFECTIVE-MASS; SILICON; GE; SI;

D O I：

10.1103/PhysRevLett.109.057402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Direct-gap gain up to 850 cm(-1) at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0 x 10(20) cm(-3). The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain, optical amplification cannot take place, because the carriers also generate pump-induced absorption of approximate to 7000 cm(-1). Parallel studies of III-V direct-gap InGaAs layers validate our spectroscopy and modeling. Our self-consistent results contradict current explanations of lasing in Ge-on-Si cavities.

引用

页数：5

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