Solvothermal reaction route to nanocrystalline semiconductors AgMS2 (M = Ga, In)

被引：52
作者：
Hu, JQ
Lu, QY
Tang, KB [1 ]
Qian, YT
Zhou, G
Liu, XM
机构：
[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China
[2] Univ Sci & Technol, Dept Chem, Hefei, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 1999年 / 12期
关键词：
D O I：
10.1039/a902218j
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Nanocrystalline semiconductors AgGaS2 and AgInS2 with particle sizes ranging from 5 to 12 nm are prepared by a solvothermal reaction in the temperature range 180-230 degrees C.
引用
收藏
页码：1093 / 1094
页数：2
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  • [11] Fluorescence intermittency in single cadmium selenide nanocrystals
    Nirmal, M
    Dabbousi, BO
    Bawendi, MG
    Macklin, JJ
    Trautman, JK
    Harris, TD
    Brus, LE
    [J]. NATURE, 1996, 383 (6603) : 802 - 804
  • [12] ELIMINATION OF OPTICAL SCATTERING DEFECTS IN AGGAS2 AND AGGASE2
    ROUTE, RK
    FEIGELSON, RS
    RAYMAKERS, RJ
    CHOY, MM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) : 239 - 245
  • [13] OPTICAL AND ELECTRICAL PROPERTIES OF AGGAS2 AND AGGASE2
    TELL, B
    KASPER, HM
    [J]. PHYSICAL REVIEW B, 1971, 4 (12): : 4455 - &
  • [14] SOLID-STATE GROWTH OF SOME I-III-VI2-CHALCOPYRITE CRYSTALS
    YAMAMOTO, N
    YOKOTA, K
    HORINAKA, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 747 - 751
  • [15] Characterization of native dislocations in chalcopyrite AgGaS2 by X-ray topography
    Yonenaga, I
    Sumino, K
    Niwa, E
    Masumoto, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) : 616 - 620
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