A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier

被引：0
作者：
Caddemi, A. [1 ]
Cardillo, E. [1 ]
机构：
[1] Univ Messina, Dept Engn, I-98166 Messina, Italy
来源：
2019 14TH INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES, SYSTEMS AND SERVICES IN TELECOMMUNICATIONS (TELSIKS 2019) | 2019年
关键词：
GaN amplifier; HEMT optical behavior; laser; light exposure; power added efficiency; PAE; ULTRAVIOLET PHOTODETECTORS;
D O I：
10.1109/telsiks46999.2019.9002114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with a new method for improving the power added efficiency of an amplifier by exploiting a blue-ray laser beam. The active device of the tested amplifier is an AlGaN/GaN HEMT on SiC whose dc performance has been prior analyzed with and without applying the laser beam. Thereafter, the effect of the optical radiation on the power added efficiency of the amplifier has been investigated and the relevant results have been reported. This contribution follows an intense experimental activity of the authors in this field and points out this beneficial feature of the optical radiation.
引用
收藏
页码：307 / 310
页数：4
相关论文
共 25 条
  • [1] Systematic experimental analysis of an optical sensing microwave low-noise amplifier
    Caddemi, Alina
    Cardillo, Emanuele
    [J]. IET MICROWAVES ANTENNAS & PROPAGATION, 2019, 13 (15) : 2678 - 2681
  • [2] Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs
    Caddemi, Alina
    Cardillo, Emanuele
    Patane, Salvatore
    Triolo, Claudia
    [J]. ELECTRONICS, 2019, 8 (06):
  • [3] An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier
    Caddemi, Alina
    Cardillo, Emanuele
    Patane, Salvatore
    Triolo, Claudia
    [J]. IEEE SENSORS JOURNAL, 2018, 18 (22) : 9214 - 9221
  • [4] Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's
    Caddemi, Alina
    Cardillo, Emanuele
    Crupi, Giovanni
    [J]. IET CIRCUITS DEVICES & SYSTEMS, 2018, 12 (03) : 242 - 248
  • [5] Caddemi A, 2017, 2017 COMPUTING AND ELECTROMAGNETICS INTERNATIONAL WORKSHOP (CEM'17), P51
  • [6] Comparative analysis of microwave low-noise amplifiers under laser illumination
    Caddemi, Alina
    Cardillo, Emanuele
    Crupi, Giovanni
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 58 (10) : 2437 - 2443
  • [7] Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction
    Caddemi, Alma
    Cardillo, Emanuele
    Salvo, Giuseppe
    Patane, Salvatore
    [J]. MICROELECTRONICS RELIABILITY, 2016, 65 : 310 - 317
  • [8] A Simplified Transistor-Based Analog Predistorter for a GaN Power Amplifier
    Cai, Qi
    Che, Wenquan
    Ma, Kaixue
    Zhang, Mi
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (03) : 326 - 330
  • [9] TRAP-RELATED EFFECTS IN ALGAAS GAAS HEMTS
    CANALI, C
    MAGISTRALI, F
    PACCAGNELLA, A
    SANGALLI, M
    TEDESCO, C
    ZANONI, E
    [J]. IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (01): : 104 - 108
  • [10] Microwave noise parameters of pseudomorphic GaInAs HEMT's under optical illumination
    Escotte, L
    Grenier, K
    Tartarin, JG
    Graffeuil, J
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) : 1788 - 1789
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