Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon

被引：5

作者：

Sassella, A

Borghesi, A

Pivac, B

Porrini, M

机构：

[1] Univ Milan, INFM, I-20125 Milan, Italy

[2] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia

[4] MEMC Elect Mat, I-39012 Merano BZ, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1425457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen O-i concentration subjected to a three-step thermal treatment. These data can be used to correct the residual O-i values determined at room temperature following the standard procedure from the intensity of the 1107 cm(-1) absorption band. The error in residual O-i is found to reach values on the order of 2x10(17) atoms/cm(3) for samples with initial O-i content higher than 6.5x10(17) atoms/cm(3). (C) 2001 American Institute of Physics.

引用

页码：4106 / 4108

页数：3

共 18 条

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