Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures

被引：11

作者：

Ozgit-Akgun, Cagla ^{[1
,2
]}

Goldenberg, Eda ^{[2
]}

Bolat, Sami ^{[2
,3
]}

Tekcan, Burak ^{[2
,3
]}

Kayaci, Fatma ^{[1
,2
]}

Uyar, Tamer ^{[1
,2
]}

Okyay, Ali Kemal ^{[1
,2
,3
]}

Biyikli, Necmi ^{[1
,2
]}

机构：

[1] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[2] Bilkent Univ, UNAM Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[3] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 4-5 | 2015年 / 12卷 / 4-5期

关键词：

AlN; GaN; InN; atomic layer deposition (ALD); hollow cathode plasma; ALN; AMMONIA; GROWTH; INN; GAN;

D O I：

10.1002/pssc.201400167

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. (c) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：394 / 398

页数：5

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