Nitride-based light-emitting solar cell

被引：11

作者：

Kuwahara, Y. ^{[1
]}

Fujiyama, Y. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

机构：

[1] Meijo Univ, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaInN/GaN; MOVPE; photoluminescence; electroluminescence; LEDs; solar cell;

D O I：

10.1002/pssc.200983529

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the characteristics of a group-III-nitride-based solar cell. A GaInN/GaN double heterojunction p-i-n solar cell composed of a GaInN active layer sandwiched between n-type and p-type GaN layers was grown by metal-organic vapor phase epitaxy through an undoped GaN layer on (0001) sapphire substrate. The InN molar fraction of the GaInN active layer was determined to be 11% from a secondary ion mass spectrometry profile. The maximum external quantum efficiency reached 65%, and the internal quantum efficiency was 95% or more. This device emitted light after forward current injection. The PL peak almost corresponded to the absorption edge. However, the electroluminescence (EL) peak was at the wavelength much longer than the absorption edge. The open-circuit voltage is 1.51 V, the fill factor is 52%, and the short-circuit current density is 1.6 mA/cm(2). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 4 条

[1]

de Vos A., 1992, Endoreversible thermodynamics of solar energy conversion

[2] Design and characterization of GaN/InGaN solar cells [J].