MeV Energy N+-Implanted Planar Optical Waveguides in Er-Doped Tungsten-Tellurite Glass Operating at 1.55 μm

被引:21
|
作者
Banyasz, I. [1 ]
Berneschi, S. [2 ,3 ,4 ]
Bettinelli, M. [5 ,6 ]
Brenci, M. [4 ]
Fried, M. [7 ]
Khanh, N. Q. [7 ]
Lohner, T. [7 ]
Conti, G. Nunzi [4 ]
Pelli, S. [4 ]
Petrik, P. [7 ]
Righini, G. C. [2 ,3 ,4 ]
Speghini, A. [5 ,6 ]
Watterich, A. [1 ]
Zolnai, Z. [7 ]
机构
[1] Hungarian Acad Sci, Wigner Res Ctr Phys, Dept Crystal Phys, H-1525 Budapest, Hungary
[2] Ctr Studi & Ric Enrico Fermi, I-00184 Rome, Italy
[3] Museo Stor Fis, I-00184 Rome, Italy
[4] IFAC CNR, Nello Carrara Inst Appl Phys, MDF Lab, I-50019 Sesto Fiorentino, FI, Italy
[5] Univ Verona, INSTM, I-37134 Verona, Italy
[6] Univ Verona, Dept Biotechnol, Lab Solid State Chem, I-37134 Verona, Italy
[7] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源
IEEE PHOTONICS JOURNAL | 2012年 / 4卷 / 03期
关键词
Integrated optics; planar waveguide; ellipsometry; m-line spectroscopy; GAIN;
D O I
10.1109/JPHOT.2012.2194997
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the fabrication and characterization of planar waveguides in an Er-doped tungsten-tellurite glass by implantation of 3.5 MeV N+ ions. Implantations were carried out in a wide fluence range of 1 . 10(16) divided by 8 . 10(16) ions/cm(2). Waveguides were characterized by m-line spectroscopy and spectroscopic ellipsometry. Irradiation-induced refractive index modulation saturated around a fluence of 8 . 10(16) ions/cm(2). Waveguides operating at 1550 nm were obtained in that material using 3.5 MeV N+ ion implantation.
引用
收藏
页码:721 / 727
页数:7
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