Atomic intermixing in short-period InAs/GaSb superlattices

被引：19

作者：

Ashuach, Y. ^{[1
]}

Kauffmann, Y. ^{[1
]}

Isheim, D. ^{[2
,3
]}

Amouyal, Y. ^{[1
]}

Seidman, D. N. ^{[2
,3
]}

Zolotoyabko, E. ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Ctr Atom Probe Tomog, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 24期

关键词：

PROBE TOMOGRAPHY; III-V; RESOLUTION; POLARITY;

D O I：

10.1063/1.4729058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and laser-assisted local-electrode atom-probe (LEAP) tomography are utilizing for characterizing short-period InAs/GaSb superlattices with an emphasis on obtaining the atomic concentration profiles with sub-nm resolution. HAADF-STEM permits direct visualization and counting of atomic columns in individual sub-layers. The spatial resolution of HAADF-STEM is sufficient to resolve the anion-cation dumbbells and, on this basis, to follow the atomic distributions across a superlattice. Both methods confirm that InAs-on-GaSb interfaces are wider than GaSb-on-InAs interfaces. The interfacial widths deduced from LEAP tomographic measurements are slightly larger than those extracted from HAADF-STEM micrographs, with the maximum total width not exceeding 4.5 monolayers. LEAP tomographic analysis shows the presence of about 7 at. % of Sb atoms in the middle of the InAs sub-layers, as a result of As/Sb substitutions during growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729058]

引用

页数：4

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