Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

被引：8

作者：

Cooper, David ^{[1
]}

Rivallin, Pierrette ^{[1
]}

Guegan, Georges ^{[1
]}

Plantier, Christophe ^{[1
]}

Robin, Eric ^{[2
]}

Guyot, Florence ^{[3
]}

Constant, Isabelle ^{[3
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

[2] CEA, INAC, F-38054 Grenoble 9, France

[3] LFOUNDRY Rousset, F-13790 Rousset, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 12期

基金：

欧洲研究理事会;

关键词：

QUANTITATIVE-ANALYSIS;

D O I：

10.1088/0268-1242/28/12/125013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Off-axis electron holography is a unique technique in that it can be used to provide maps of the electrostatic potentials and strain in semiconductor specimens with nm-scale resolution. In this paper, we show that if sufficient care is taken, focused ion beam milling can be used to prepare electrically tested devices from a precise location on a wafer for studies of their electrostatic and strain fields as well as their structure and composition. We have compared the physical properties of several devices with process simulations and electrical test results which were measured over a time period of several months. We believe that electron holography can now be used to measure the positions of the electrical junctions and also quantitative values of the strain in an industrial environment.

引用

页数：10

共 39 条

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