Resistivity and magnetoresistance of degenerate ferromagnetic semiconductors with double exchange

被引：8
|
作者：
Nagaev, EL
机构：
[1] Institute for High Pressure Physics, Troitsk
来源：
PHYSICS LETTERS A | 1996年 / 215卷 / 5-6期
关键词：
D O I：
10.1016/0375-9601(96)00190-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A theory for the resistivity and giant magnetoresistance is developed for degenerate ferromagnetic semiconductors with double exchange (La1-xCaxMnO3 and so on), based on the magnetization-dependent interaction between charge carriers and ionized impurities. A high resistivity peak and even a metal-insulator-like phase transition are possible with increasing temperature.
引用
收藏
页码：321 / 325
页数：5
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