Resistivity and magnetoresistance of degenerate ferromagnetic semiconductors with double exchange

被引：8

作者：

Nagaev, EL

机构：

[1] Institute for High Pressure Physics, Troitsk

来源：

PHYSICS LETTERS A | 1996年 / 215卷 / 5-6期

关键词：

D O I：

10.1016/0375-9601(96)00190-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory for the resistivity and giant magnetoresistance is developed for degenerate ferromagnetic semiconductors with double exchange (La1-xCaxMnO3 and so on), based on the magnetization-dependent interaction between charge carriers and ionized impurities. A high resistivity peak and even a metal-insulator-like phase transition are possible with increasing temperature.

引用

页码：321 / 325

页数：5

共 50 条

[1] Resistivity and magnetoresistance of degenerate ferromagnetic semiconductors with double exchange
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