M(Al,Ni)-TiO2-Based Photoanode for Photoelectrochemical Solar Cells

This study presents the incorporation of Al and Ni cations onto the surface of TiO2 nanoparticles used as photoelectrode in dye sensitized solar cells (DSSCs). The incorporation of these cations was performed using the chemical bath deposition (CBD) technique. This process was applied up to three times to evaluate the semiconductors' properties with respect to the amount of Al and Ni. The M(Al,Ni)-TiO2-based semiconductors were widely characterized using techniques such as X-ray fluorescence, X-ray diffraction, Raman spectroscopy, UV-Vis spectroscopy and X-ray photoelectron spectroscopy. The presence of (hydr)oxide species of Al(III) and Ni(II) was confirmed and anatase was the predominant crystalline phase obtained. Moreover, for both elements, a decrease in the band gap energy was observed, this being more pronounced after the incorporation of Ni. Furthermore, the use of the M(Al,Ni)-TiO2-based semiconductors as photoelectrodes in DSSCs led to an increase in the open-circuit voltage of up to 22% and 10% for the incorporation of Al and Ni, respectively. This increase can be reasonably explained by the negative shift of the flat band potential of the photoelectrodes. EIS measurements were performed to study the electron transport kinetics in the photoelectrode and the internal resistance in the DSSCs to understand the photocurrent density values obtained.