Self-catalyzed VLS grown InAs nanowires with twinning superlattices

被引：54

作者：

Grap, Th ^{[1
,2
]}

Rieger, T. ^{[1
,2
]}

Bloemers, Ch ^{[1
,2
]}

Schaepers, Th ^{[1
,2
,3
]}

Gruetzmacher, D. ^{[1
,2
]}

Lepsa, M. I. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

[2] Julich Aachen Res Alliance, JARA Fundamentals Future Informat Technol, Julich, Germany

[3] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 33期

关键词：

GAAS NANOWIRES; EPITAXY;

D O I：

10.1088/0957-4484/24/33/335601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor-liquid-solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.

引用

页数：7

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